1 features ? rectangular led rf performance C 450 nm C 200 mw min C 460 nm C 180 mw min ? high reliability - eutectic, solder paste or preforms attach ? low forward voltage C 3.2 v typical at 120 ma ? maximum dc forward current - 250 ma ? class 2 esd rating ? ingan junction on thermally conductive sic substrate applications ? large lcd backlighting C television ? general illumination ? medium lcd backlighting C portable pcs C monitors ? led video displays ? white leds tr5270m? leds cxxxtr5270m- sxx000 (175-m) cxxxtr5270m- sxx000-3 (250-m) data sheet crees tr5270m leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary device technology and silicon-carbide substrates to deliver superior value for the tv-backlighting and general-illumination markets. the tr5270m leds are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly effcient solution. the tr5270m is available in two chip thicknesses: 175 m and 250 m. the 250-m-thick version offers 5% improvement brightness over the 175-m version due the increased bevel area. the metal backside allows for eutectic die attach and enables superior performance from improved thermal management. the design is optimally suited for industry-standard top-view packages. cxxxtr5270m-sxx000 (175-m) chip diagram dat a sheet: cpr3ew rev. - top view bottom view die cross section anode (+) 90-m diameter tr5270m led 520 x 700 m t = 175 m bottom surface 335 x 515 m cathode (-) 98-m diameter metal back-side 302 x 482 m subject to change without notice. www.cree.com
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr5270m are trademarks of cree, inc. 2 cpr3ew rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com cxxxtr5270m-sxx000-3 (250-m) chip diagram mechanical specifcations cxxxtr5270m-sxx000 (175-m) description dimension tolerance p-n junction area (m) 446 x 643 35 chip area (m) 520 x 700 35 chip thickness (m) 175 15 au bond pad diameter anode (m) 90 10 au bond pad thicknesses (m) 1.0 0.5 au bond pad diameter cathode (m) 98 10 bottom area (m) 335 x 515 45 bottom contact metal (m) 302 x 482 25 bottom contact metal thickness (m) 3.0 1.0 mechanical specifcations cxxxtr5270m-sxx000-3 (250-m) description dimension tolerance p-n junction area (m) 446 x 643 35 chip area (m) 520 x 700 35 chip thickness (m) 250 15 au bond pad diameter anode (m) 90 10 au bond pad thicknesses (m) 1.0 0.5 au bond pad diameter cathode (m) 98 10 bottom area (m) 240 x 420 45 bottom contact metal (m) 213 x 392 25 bottom contact metal thickness (m) 3.0 1.0 top view bottom view die cross section anode (+) 90-m diameter tr5270m led 520 x 700 m t = 250 m bottom surface 240 x 420 m cathode (-) 98-m diameter metal back-side 213 x 392 m
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr5270m are trademarks of cree, inc. 3 cpr3ew rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c notes 1, 3 & 4 cxxxtr5270m-sxx00 and cxxxtr5270m-sxx00-3 dc forward current 250 ma peak forward current (1/10 duty cycle @ 1 khz) 300 ma led junction temperature 150c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 120 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c450tr5270m-sxx000 2.7 3.2 3.5 2 20 c460tr5270m-sxx000 2.7 3.2 3.5 2 21 c450tr5270m-sxx000-3 2.7 3.2 3.5 2 20 c460tr5270m-sxx000-3 2.7 3.2 3.5 2 21 notes: 1. maximum ratings are package-dependent. the above ratings were determined using lamps in chip-on-mcpcb (metal core pcb) packages for characterization. ratings for other packages may differ. junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). 2. product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. 3. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 120 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy encapsulant and clear epoxy die attach). optical characteristics measured in an integrating sphere using illuminance e. 4. the maximum forward current is determined by the thermal resistance between the led junction and ambient. it is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the led junction to ambient in order to optimize product performance. max if (ma) 250 max vf @max if (v) 3.5 max tj (deg c) 150 max power (w) 0.875 thermal resistance (c/w) 10 20 30 if @ tamb rth ( j-a) = tamb tamb 250 25 25 25 250 141.25 132.5 123.75 0 150 150 150 0 50 100 150 200 250 300 50 75 100 125 150 175 maximum forward current (ma) ambient temperature ( ? c) rth j- a = 10 ? c/w rth j- a = 20 ? c/w rth j- a = 30 ? c/w rth j- a = 40 ? c/w
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr5270m are trademarks of cree, inc. 4 cpr3ew rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for cxxxtr5270m-sxx00 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (cxxxtr5270m-sxxxxx or cxxxtr5270m-sxxxxx-3 ) orders may be flled with any or all bins (cxxxtr5270m-xxxx or cxxxtr5270m-xxxx-3) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 120 ma. note: the radiant-fux values above are representative of the die in a cree 5-mm lamp. c450tr5270m-s20000 (175-m thick) c450tr5270m-0209 c450tr5270m-0210 c450tr5270m-0211 c450tr5270m-0212 c450tr5270m-0205 c450tr5270m-0206 c450tr5270m-0207 c450tr5270m-0208 dominant wavelength (nm) 447.5 450 452.5 445 455 220 200 radiant flux (mw) c460tr5270m-s18000 (175-m thick) c460tr5270m-0205 c460tr5270m-0206 c460tr5270m-0207 c460tr5270m-0208 c460tr5270m-0201 c460tr5270m-0202 c460tr5270m-0203 c460tr5270m-0204 dominant wavelength (nm) 457.5 460 462.5 455 465 radiant flux (mw) 200 180 c450tr5270m-s21000-3 (250-m thick) c450tr5270m-0309-3 c450tr5270m-0310-3 c450tr5270m-0311-3 c450tr5270m-0312-3 c450tr5270m-0305-3 c450tr5270m-0306-3 c450tr5270m-0307-3 c450tr5270m-0308-3 dominant wavelength (nm) 447.5 450 452.5 445 455 230 210 radiant flux (mw) C460TR5270M-S19000-3 (250-m thick) c460tr5270m-0305-3 c460tr5270m-0306-3 c460tr5270m-0307-3 c460tr5270m-0308-3 c460tr5270m-0301-3 c460tr5270m-0302-3 c460tr5270m-0303-3 c460tr5270m-0304-3 dominant wavelength (nm) 457.5 460 462.5 455 465 radiant flux (mw) 210 190
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr5270m are trademarks of cree, inc. 5 cpr3ew rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the tr5270m led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 50% 100% 150% 200% 0 50 100 150 200 250 relative light intensity if (ma) relative intensity vs forward current - 3 - 2 - 1 0 1 2 3 0 50 100 150 200 250 dominant wavelength shift (nm) if (ma) wavelength shift vs forward current 0% 50% 100% 150% 200% 0 50 100 150 200 250 relative light intensity if (ma) relative intensity vs forward current - 3 - 2 - 1 0 1 2 3 0 50 100 150 200 250 dominant wavelength shift (nm) if (ma) wavelength shift vs forward current 0 50 100 150 200 250 0 1 2 3 4 5 if (ma) vf (v) forward current vs forward voltage - 0.400 - 0.350 - 0.300 - 0.250 - 0.200 - 0.150 - 0.100 - 0.050 0.000 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs junction temperature 0 50 100 150 200 250 0 1 2 3 4 5 if (ma) vf (v) forward current vs forward voltage - 0.400 - 0.350 - 0.300 - 0.250 - 0.200 - 0.150 - 0.100 - 0.050 0.000 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs junction temperature 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative light intensity vs junction temperature - 2 - 1 0 1 2 3 4 5 6 25 50 75 100 125 150 dominant wavelength shift (nm) junction temperature ( c) dominant wavelength shift vs junction temperature 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative light intensity vs junction temperature - 2 - 1 0 1 2 3 4 5 6 25 50 75 100 125 150 dominant wavelength shift (nm) junction temperature ( c) dominant wavelength shift vs junction temperature
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr5270m are trademarks of cree, inc. 6 cpr3ew rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the tr5270m led product. actual patterns will vary slightly for each chip. copyright ? 2010, cree, inc. ( confidential ) pg. 3 far fields C tr520
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